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JSSC 2012第11期RF & Wireless0.11μmVCO

An Ultra-Low-Cost High-Performance Bluetooth SoC in 0.11- mC M O S Sam Chun-Geik Tan, Fei Song, Renliang Zheng, Ji qing Cui, Guoqin Yao, Litian Tang, Y uejin Y ang, Dandan Guo, Alexander Tanzil, Junmin Cao, Ming Ko ng, KianTiong Wong, Soong Lin Chew, Chee-Lee Heng, Osama Shana’a, Senior Member , IEEE, and Guang-Kaai Dehng

采用0.11μm CMOS工艺实现的高集成度低成本高性能蓝牙3.0+EDR SoC
10 dBm TX输出功率, 95.5 dBm接收灵敏度, 48 mA TX电流, 35 mA RX电流
蓝牙SoC低成本高性能CMOS集成巴伦
集成TX/RX共享巴伦,无需T/R开关
4 LO-based VCO减少LO牵引和TX带外杂散
高输出功率和低接收灵敏度
Abstract
A highly integrated ultra-low-cost high-performance Bluetooth 3.0+EDR SoC is implemented in 0.11- md i g i t a lC M O S technology. The transceiver has a n integrated balun shared be- tween TX and RX, eliminating the need for a separate T/R switch. A4 LO-based VCO is implemented to reduce LO pulling and to minimize TX out-of-band spurious emissions. The transmitter pro- vides high output power of 10 and 7 dBm in BDR and EDR3 modes respectively, with 1.5-kHz frequency stability and 6% rms DEVM. The receiver sensitivity is 95.5, 96.5, and 89 dBm for BDR, EDR2, and EDR3 modes respectively. Total SoC DC current consumption for continuous TX transmission at 10 dBm output power is 48 mA and for continuous RX reception at reference sen- sitivity level is 35 mA. Total die size is 5.7 mm ,o fw h i c h1 . 8m m is occupied by RF, analog, and PMU circuits.