← 返回 JSSC 论文列表JSSC 2012第11期RF & Wireless0.11μmVCO
An Ultra-Low-Cost High-Performance Bluetooth SoC in 011- mC M O S Sam Chun-Geik
采用0.11μm CMOS工艺实现的高集成度低成本高性能蓝牙3.0+EDR SoC
10 dBm TX输出功率, 95.5 dBm接收灵敏度, 48 mA TX电流, 35 mA RX电流
蓝牙SoC低成本高性能CMOS集成巴伦
▸集成TX/RX共享巴伦，无需T/R开关
▸4 LO-based VCO减少LO牵引和TX带外杂散
▸高输出功率和低接收灵敏度
Abstract
A highly integrated ultra-low-cost high-performance
Bluetooth 3.0+EDR SoC is implemented in 0.11- md i g i t a lC M O S
technology. The transceiver has a n integrated balun shared be-
tween TX and RX, eliminating the need for a separate T/R switch.
A4 LO-based VCO is implemented to reduce LO pulling and to
minimize TX out-of-band spurious emissions. The transmitter pro-
vides high output power of 10 and 7 dBm in BDR and EDR3
modes respectively, with 1.5-kHz frequency stability and 6% rms
DEVM. T