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JSSC 2012第12期Clocking & PLLs65nmPLL

A 20 Mb/s Phase Modulator Based on a 3.6 GHz Digital PLL With −36 dB EVM at 5 mW Power Giovanni Marzin

本文提出了一种基于数字PLL的低功耗高比特率相位调制器,采用多电容组振荡器拓扑和数字自适应滤波器。
65nm CMOS, 1.2V, 20Mb/s QPSK, 5mW
相位调制器数字PLL低功耗高比特率EVM
创新点1:单比特TDC数字PLL(方法创新) - 采用单比特时间数字转换器(TDC)简化了数字PLL架构,降低了功耗和面积开销,同时保持了高精度相位检测能力,适用于高频应用。
创新点2:多电容组振荡器拓扑(电路创新) - 设计了一种多电容组振荡器,通过自动背景调节各电容组的增益,实现了宽调谐范围和高频率稳定性,支持高频相位调制需求。
创新点3:数字自适应滤波器用于延迟扩展校正(系统创新) - 引入数字自适应滤波器动态校正两路注入路径的延迟扩展,显著改善了误差矢量幅度(EVM)和频谱再生问题,提升了调制精度。
创新点4:双点注入方案(系统创新) - 采用双点注入方案结合数字PLL,实现了高速相位调制(20 Mb/s QPSK)和低功耗(5 mW),能量效率达0.25 nJ/bit。
Abstract
This paper presents a low-power high-bit-rate phase modulator based on a digital PLL with single-bit TDC and two- point injection scheme. At high bit rates, this scheme requires a controlled oscillator with wide tuning range and becomes critically sensitive to the delay spread betw een the two injection paths, con- siderably degrading the achievable error-vector magnitude and causing signi ficant spectral regrowth. A multi-capacitor-bank os- cillator topology with an automatic background regulation of the gains of the banks and a digital adaptive filter for the delay-spread correction are introduced. The phase modulator fabricated in a 65-nm CMOS process synthesizes carriers in the 2.9-to-4.0-GHz range from a 40-MHz crystal reference and it is able to produce a phase change up to with 10-bit resolution in a single reference cycle. Measured EVM at 3.6 GHz is −36 dB for a 10-Mb/s GMSK and a 20-Mb/s QPSK modulation. Power dissipation is 5 mW from a 1.2-V voltage supply, leading to a total energy consumption of 0.25 nJ/bit.