JSSC 2012第12期RF & Wireless40nm

A 60-GHz Outphasing Transmitter in 40-nm CMOS Dixian Zhao, Student Member , IEEE , Shailesh Kulkarni , Student Member , IEEE ,a n d Patrick Reynaert,S e n i o rM e m b e r ,I E E E

40纳米CMOS工艺下实现的高效60GHz异相发射机

15.6-dBm线性输出功率，25% PAE，500-Mb/s 16QAM调制

60GHz异相发射机CMOS功率效率16QAM

▸创新点1：60GHz异相发射机设计（系统创新）。该论文首次在40nm CMOS工艺上实现了60GHz异相发射机，突破了传统CMOS工艺在高频毫米波设计中的限制，为毫米波通信系统提供了新的解决方案。

▸创新点2：高输出功率和峰值效率优化（电路创新）。通过优化功率放大器和输出匹配网络，实现了15.6dBm的线性输出功率和25%的峰值功率附加效率（PAE），显著提升了毫米波发射机的性能。

▸创新点3：失配补偿和相位校正技术（方法创新）。引入失配补偿和相位校正技术，进一步提高了平均输出功率和效率，分别提升了1.6dB和4%，有效改善了系统的整体性能。

▸创新点4：500Mb/s 16QAM调制实现（系统创新）。该发射机成功实现了500Mb/s的16QAM调制，平均输出功率为12.5dBm，平均效率为15%，EVM为22dB，展示了其在高速数据传输中的应用潜力。

Abstract

This paper presents the analysis, design, and imple- mentation of a 60-GHz outphasing transmitter in 40-nm bulk CMOS. The 60-GHz outphasing transmitter is optimized for high output power and peak power-added ef ﬁciency (PAE) while maintaining suf ﬁcient linearity. The chip occupies an active area of 0.33 mm and consumes 217 mW from a 1-V supply voltage, delivering 15.6-dBm linear output power with 25% PAE (PA). It achieves a 500-Mb/s 16QAM modulation with 12.5-dBm average output power and 15% average ef ﬁciency (PA) at an EVM of 22 dB. Mismatch compensation and ph ase correction are applied to further improve the average output power and ef ﬁciency by about 1.6 dB and 4%, respectively.