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An Optimized Driver for SiC JFET-Based Switches Enabling Converter Operation Wit
本文提出了一种优化的SiC JFET驱动器，用于高效电源转换。
效率超过99%
SiC JFET电源转换驱动器高效率隔离
▸创新点1：优化的SiC JFET驱动器设计，通过最小化开关损耗和提升控制精度，显著提高了驱动效率，测试中实现了超过99%的转换效率。
▸创新点2：采用直接驱动JFET概念，结合高压SiC JFET和低压MOSFET的串联配置，实现了常关行为，增强了系统的安全性和可靠性。
▸创新点3：集成监督和控制电路，包括负电压调节器，确保驱动芯片的稳定运行，简化了系统集成，特别是在开关模式电源中的应用。
▸创新点4：使用两芯片解决方案和无芯变压器技术，实现了1700V的电气隔离，提升了系统的安全性和隔离性能。
Abstract
This paper presents the single channel galvanically
isolated gate driver optimized for driving a normally-on silicon
carbide junction field effect transistor (SiC JFET) also presented at
ISSCC 2012 [1]. The idea of the chosen direct drive JFET concept
is to switch power with a normally-on SiC JFET, using the high
voltage breakdown capability of the SiC JFET and ensurin gas a f e
normally-off behavior using a normally-off low voltage MOSFET
in series. By controlling the transistor gates individual