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JSSC 2013第1期Digital Circuits32nm

A 2.05 GV ertices/s 151 mW Lighting Accelerator for 3D Graphics V ertex and Pixel Shading in 32 nm CMOS

一款用于3D图形顶点和像素着色的高性能照明加速器,采用32nm CMOS工艺,实现2.05 GVertices/s的吞吐量。
1.05 V, 32 nm CMOS, 2.05 GVertices/s, 354 W active leakage power, 2.22 GHz scalable performance
照明加速器3D图形顶点着色像素着色高性能计算
创新点1:单周期吞吐量照明加速器设计,通过并行计算环境光、漫反射和镜面反射光照,实现2.05 GVertices/s的高吞吐量,显著提升3D图形处理效率。
创新点2:采用32b对数与反对数单元实现高精度计算,将浮点运算转换为定点运算,同时保持仅0.56%的平均顶点光照误差,兼顾了计算精度与硬件效率。
创新点3:稀疏树固定点加法器与乘法器优化,通过截断部分积减少树结构,降低关键路径逻辑级数达47%,同时支持2.22 GHz的可扩展性能。
创新点4:创新的电源管理设计,在560 mV超低电压下实现56 GVertices/s/W的峰值能效,同时主动泄漏功率仅为354 μW,适用于高性能处理器和移动SoC。
Abstract
This paper describes a single-cycle throughput lighting accelerator fabricated in 1.05 V , 32 nm CMOS for on-die acceleration of 3D graphics vert ex and pixel shading in high-per- formance processors and mobile systems-on-chip. Log-domain parallel computation of ambient, diffuse, and specular lighting using high-accuracy 32b log and anti-log units that convert computation from floating-point (FP) to fixed-point domain, 32b sparse-tree fixed-point adders and a 32 32b signed fixed-point multiplier with truncated partial product reduction tree enable 2.05 GVertices/s throughput measured at 1.05 V , 25 Ci na na r e a of 0.064 while achieving: (i) 47% reduction in critical path logic stages compared to previously published work, (ii) 0.56% mean vertex lighting error com pared to single-precision FP computation, (iii) 354 W active leakage power measured at 1.05 V , 25 C, (iv) scalable performance up to 2.22 GHz, 232 mW measured at 1.2 V , (v) peak energy-ef ficiency of 56 GV ertices/s/W, measured at 560 mV , 25 C, and (vi) 119.6 dB PSNR for a 2 M pixel high-resolution 3D image.