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JSSC 2013第2期RF & Wireless45nm

High-Throughput Signal Component Separator for Asymmetric Multi-Level Outphasing

提出一种高效能、高吞吐量、高精度的信号分量分离器芯片设计,用于非对称多级输出功率放大器。
45 nm SOI CMOS, 3.4 GSamples/s, 12-bit精度, 1.5 mm²面积
信号分量分离器非对称多级输出高吞吐量高精度能效优化
固定点分段线性函数逼近提高硬件效率
45 nm SOI CMOS工艺实现高集成度
3.4 GSamples/s高吞吐量与12-bit高精度
Abstract
This paper presents an energy-ef ficient high - throughput and high-precision s ignal component separator (SCS) chip design for the asymmetric-m ultilevel-outphasing (AMO) power ampli fier. It uses a fixed-point piece-wis el i n e a rf u n c t i o n a l approximation developed to improve the hardware ef ficiency of the outphasing signal processing functions. The chip is fabricated in 45 nm SOI CMOS process and the SCS consumes an active area of 1.5 mm . The new algorithm enables the SCS to run at a