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JSSC 2013第3期Memory90nmNeural Network Accelerator

An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Ampli fier for S

提出一种抗偏移的快速随机读取电流采样感测放大器,用于小电流非易失性存储器。
90nm CMOS, 26ns随机访问时间, 100nA以下电流感测
感测放大器非易失性存储器电流采样抗偏移快速读取
抗偏移设计,抑制器件失配导致的偏移
保持对预充电时间不足的容忍性
读取速度比传统感测放大器快6.3-8.1倍
Abstract
Decreasing read cell current has become a major trend in nonvolatile memory (NVM ). However, a reduced leaves the operation of the sense ampli fier (SAs) vulnerable to bitline (BL) level offset and SA input offset. Thus, small- NVMs suffer from slow read speed or lo w read yield. In this study, we propose a new current-sampling-based SA (CSB-SA) to suppress the offset due to device mismatch, while maintaining tolerance for insuf ficient precha rge time. These features enable CSB-SA to achieve a re