← 返回 JSSC 论文列表JSSC 2013第5期RF & Wireless0.18 µm SiGe BiCMOSPhased Array
A 70–100 GHz Direct-Conversion Transmitter and Receiver Phased Array Chipset Demonstrating 10 Gb/s
展示了一款70-100 GHz的直接转换收发器相控阵芯片组，采用0.18 µm SiGe BiCMOS工艺，支持高速无线通信。
接收通道增益33 dB，噪声系数<7 dB，发射通道输出功率>5 dBm，功耗1 W
毫米波相控阵直接转换SiGe BiCMOS无线通信
▸创新点1：70-100 GHz的直接转换收发器相控阵芯片组，采用0.18 µm SiGe BiCMOS工艺实现高频段操作，覆盖了传统毫米波通信中较少涉及的70-100 GHz频段，提供了更高的带宽和更低的干扰。
▸创新点2：集成分布式校准内存，通过内置的校准机制显著提高了相控阵的相位和幅度一致性，使得每个收发通道在75-95 GHz范围内具有33 dB的转换增益和低于7 dB的噪声系数。
▸创新点3：校准的直接上下变频混频器链，优化了信号路径的线性度和效率，使得发射通道在70-100 GHz范围内输出平坦的饱和功率超过5 dBm，同时支持高数据速率传输（10 Gb/s使用16-QAM，8.75 Gb/s使用32-QAM）。
▸创新点4：低功耗设计，收发器阵列仅需1.5 V和2.5 V电源供电，每芯片功耗为1 W，适合便携式和嵌入式应用场景，同时展示了1米距离的无线链路性能。
Abstract
A transmitter and receiver phased array chipset is demonstrated in the range between 70 and 100 GHz using a 0.18 µm SiGe BiCMOS process with of 240/270 GHz. Each chip comprises four phased array elements with distributed calibration memory and calibrated direct up- and down-conver- sion mixer chain. Each receive ch annel has a conversion gain of 33 dB and noise figure of < 7 dB from 75–95 GHz. Each transmit channel has a flat saturated output power of > 5 dBm between 70 and 100 GHz. Both transmitter and receiver arrays operate from 1.5 V and 2.5 V power supplies and consume 1 W each. Using a die-on-PCB prototype with integrated antennas, a wireless link operating at 10 Gb/s (using 16-QAM) or 8.75 Gb/s (using 32-QAM) is demonstrated at a distance of 1-meter with a carrier frequency of 88 GHz.