← 返回 JSSC 论文列表JSSC 2013第5期RF & Wireless0.25µm SiGe BiCMOSNeural Network Accelerator
A Low-Power 26-GHz Transformer-Based Regulated Cascode SiGe BiCMOS Transimpedance Ampli fier Cheng Li,S t u d e n tM e m b e r ,I E E E
一种基于变压器的低功耗26GHz SiGe BiCMOS跨阻放大器,用于高速光接收机。
53dBΩ跨阻增益,26GHz带宽,21.3pA/√Hz输入噪声,8.2mW核心功耗
跨阻放大器低功耗变压器调节SiGe BiCMOS光接收机
▸采用变压器调节的共源共栅输入级,提供被动负反馈增益
▸通过串联电感峰值隔离光探测器电容
▸优化变压器参数和串联电感值以扩展带宽和最小化抖动
Abstract
Low-power high-speed optical receivers are required to meet the explosive growth in data communication systems. This paper presents a 26 GHz transimpedance ampli fier (TIA) that employs a transformer-based regulated cascode (RGC) input stage which provides passive negative-feedback gain that enhances the effective transconductance of the TIA’s input common-base transistor; reducing the input resistance and isolating the parasitic photodiode capacitance. This al lows for considerable bandwidth extension without signi ficant noise degradation or power con- sumption. Further bandwidth extension is achieved through series inductive peaking to isolate the photodetector capacitance from the TIA input. The optimum choice of series inductive peaking value and key transformer param eters for bandwidth extension and jitter minimization is analyzed. Fabricated in a 0.25-µm SiGe BiCMOS technology and tested with an on-chip 150 fF capacitor to emulate a photodiode, the TIA achieves a 53 dB Ω single-ended transimpedance gain with a 26 GHz bandwidth and 21.3 pA/ average input-referred noise current spectral density. Total chip power including output buffering is 28.2 mW from a 2.5 V supply, with the core TIA consuming 8.2 mW, and the chip area including pads is 960 µm x 780 µm.