Post-Si Programmable ESD Protection Circuit Design: Mechanisms and Analysis Xin Wang, Zitao Shi, Jian Liu, Lin Lin, Hui Zhao, Li Wang, Rui Ma, Chen Zhang, Zongyu Dong

Abstract

This paper reports new mechanisms, design, and analysis of novel electrostatic discharge (ESD) protection solu- tions, which enable post-Si field-programmable ESD protection circuit design for the first time. Two new ESD protection con- cepts, nano-crystal quantum-do t (NC-QD) and silicon–oxide–ni- tride–oxide–silicon (S ONOS)-based ESD pr otection, are pre- sented. Experiments validated the two new programmable ESD protection mechanisms. Prototype designs demonstrated a wide adjustable ESD triggering voltage range of 2 V, very fast response to ESD transients of rising time 100 pS and pulse duration 1n S , E S D protection capability of at le ast 25 mA m for human body model (HBM) and 400 mA m for charged device model (CDM) equivalent stressing, and very low leakage current as low as 1.2 pA. Field-programmable E SD protection circuit design examples are discussed.