JSSC 2013第6期Analog Circuits0.18μm CMOSBandgap Reference

1.2-V Supply, 100-nW, 1.09-V Bandgap and 0.7-V Supply, 52.5-nW, 0.55-V Subbandgap Reference Circuits for Nanowatt CMOS LSIs Yu j i O s a k i, Member , IEEE,T e t s u y a H i r o s e,M e m b e r ,I E E E

提出一种用于纳瓦级LSI的带隙基准和亚带隙基准电路，无需电阻，仅使用MOSFET和双极晶体管。

1.09V/0.548V参考电压, 100nW/52.5nW功耗

带隙基准亚带隙基准纳瓦级电路低电压CMOS

▸创新点1：电路创新 - 无需电阻的设计，仅使用MOSFET和一个双极晶体管，简化了电路结构并提高了集成度。

▸创新点2：电路创新 - 亚1V电源电压工作，通过无电阻分压技术实现，适用于低电压应用场景。

▸创新点3：系统创新 - 纳瓦级功耗，BGR电路功耗100nW，sub-BGR电路功耗52.5nW，显著降低能耗。

▸创新点4：方法创新 - 采用比例绝对温度（PTAT）电压生成器，提高了温度稳定性和精度。

Abstract

This paper presents bandgap reference (BGR) and sub-BGR circuits for nanowatt LSIs. The circuits consist of a nano-ampere current reference circuit, a bipolar transistor, and proportional-to-absolute-temperature (PTAT) voltage generators. The proposed circuits avoid the use of resistors and contain only MOSFETs and one bipolar transistor. Because the sub-BGR circuit divides the output voltage of the bipolar transistor without resistors, it can operate at a sub-1-V supply. The experimental results obtained in the 0.18- m CMOS process demonstrated that the BGR circuit could generate a reference voltage of 1.09 V and the sub-BGR circuit could generate one of 0.548 V. The power dissipations of the BGR and sub- BGR circuits corresponded to 100 and 52.5 nW.