JSSC 2013第6期Memory45 nm

A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Powe

设计并制造了一种1 Mb非易失性嵌入式存储器，采用4T2MTJ单元，实现零待机功耗和高性能。

1 Mb宏大小，45 nm技术节点

非易失性存储器嵌入式存储器4T2MTJ电源门控静态噪声容限

▸使用4T2MTJ单元实现零待机功耗

▸采用细粒度电源门控方案优化功耗与面积

▸通过不对称蝴蝶曲线增强静态噪声容限

Abstract

A 1 Mb nonvolatile embedded memory using a fou r transistor and two spin-transf er-torque (STT) magnetic tunnel junction (MTJ) cell is designed and fabricated to demonstrate its zero standby power and high performance. Th e power supply voltages of 32 cells along a word line (WL) are controlled simul- taneously by a power line (PL) driver to eliminate the standby power without impact on the access time. Thi s ﬁne-grained power gating scheme also optimizes th e trade-off between macro size and op