A 288-GHz Lens-Integrated Balanced Triple-Push Source in a 65-nm CMOS Technology Janusz Grzyb, Y

Abstract

A 288-GHz lens-integrated high-power source imp le- mented in a 65-nm CMOS technology is presented. The source con- sists of two free-running triple-p ush ring oscillators locked out-of phase by magnetic coupling. The oscillators drive a differential on-chip ring antenna, which illuminates a hyper-hemispherical sil- icon lens through the backside of the die. An on-wafer breakout of the oscillators core achieves a peak output po wer of 1.5 dBm with a 275-mW DC power consumption. The radiated power of the packaged source is 4.1 dBm, which is the highest reported radi- ated power of a single CMOS source beyond 200 GH z. The source die including the antenna occupies only 500 x 570 m .