← 返回 JSSC 论文列表
📄 下载 JSSC 原文 PDF
JSSC 2013第8期Memory32nm

An Energy Efficient 32-nm 20-MB Shared On-Die L3 Cache for Intel Xeon Processor E

英特尔Xeon处理器E5系列中一款能效优化的32纳米20MB共享片上L3缓存设计
32nm工艺, 0.7V-1.0V电压范围, 1.2GHz-4.0GHz频率范围
L3缓存能效优化Xeon处理器高K金属栅工艺冗余设计
采用0.2119um高密度大阵列单元和0.2725um高性能小阵列单元
先进的节能方案和Vccmin设计技术提升能效
支持高密度模块化和能效优化的缓存拓扑结构
Abstract
An energy ef ficient on-die 20-way set associative L3 c a c h eo fs i z e2 0M Bf o rt h eI n t e l ®X e o n ®p r o c e s s o rE 5f a m i l yi s presented. It is manufactured in the Intel’s 32-nm second gener- ation of high-K dielectric metal gate process with 9-copper metal layers. The L3 cache design uses 0.2119 um cell for the high den- sity big array and 0.2725 um cell for the high performance smaller arrays. The power ef ficiency was achieved by employing advanced power saving schemes and effe