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JSSC 2013第8期Other40nm

Increase of Crosstalk Noise Due to Imbalanced Threshold V oltage Between nMOS and pMOS in Subthreshold

首次观察到亚阈值逻辑电路中因nMOS与pMOS阈值电压不平衡导致的串扰噪声异常增加现象
40nm CMOS, 0.3V电源电压, 1.5mm互连线, 噪声幅度32%-71%可调
串扰噪声亚阈值逻辑阈值电压失配体偏置调节低功耗设计
发现亚阈值区nMOS/pMOS阈值电压不平衡导致串扰噪声指数级增长的新现象
提出适用于亚阈值区的串扰噪声简化模型
通过体偏置调节实现串扰噪声抑制(32%至71%可调)
Abstract
An abnormal increase in crosstalk noise in sub- threshold logic circuits is observed for the first time. When the threshold voltages ( ) of nMOS and pMOS are imbalanced and the on-resistance of the aggressor driver is much lower than that of the victim driver, large crosstalk noise is observed, be- cause the on-resistance has an exponential dependence on in the subthreshold region being different from normal voltage operations. A simple crosstalk noise model is also proposed and verified with SPICE simulations. In a crosstalk noise test chip with a 1.5-mm interconnect in 40-nm CMOS at a power supply voltage ( ) of 0.3 V , the measured noise amplitude increases from 32% of to 71% of ,w h e n imbalance is realized by tuning body bias in pMOS. This body bias tuning can be used to mitigate the crosstalk problem in chip designs. For noise induced by a rising edge, the noise becomes largest under the slow-nMOS/fast-pMOS corne r condition, while for noise induced by a falling edge, the noise becomes largest under the fast-nMOS/slow-pMOS corner con dition, which is explained by the proposed model.