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JSSC 2013第9期RF & WirelessJazz SBC18H3 SiGe BiCMOSPhased Array

A 108–114 GHz 4 4 Wafer-Scale Phased Array Transmitter With High-Efficiency On-Chip Antennas Woorim Shin, Student Member , IEEE

本文介绍了一种具有高效片上天线的W波段晶圆级相控阵发射器。
110 GHz时阵列增益26.5 dB,EIRP 23–25 dBm,功耗3.4 W
W波段相控阵片上天线SiGe BiCMOS毫米波通信
创新点1:W波段晶圆级相控阵 - 该论文首次实现了W波段(108-114 GHz)的晶圆级相控阵设计,采用4×4阵列架构,面积仅为6.5×6.0 mm²,在110 GHz下实现了26.5 dB的阵列增益和23-25 dBm的EIRP,为高频段通信系统提供了紧凑高效的解决方案。
创新点2:高效片上天线设计 - 通过采用100μm厚石英基板和差分结构,实现了45%的模拟天线效率(110 GHz),结合SiGe BiCMOS工艺,显著提升了天线在W波段的能量转换效率,解决了高频段天线损耗大的关键问题。
创新点3:低互耦相控阵架构 - 创新性地采用等相位分布网络和单元级移相器设计,实现了稳定的有源天线阻抗(随扫描角度变化小),通过优化阵列布局将单元间互耦降至最低,实测显示二维波束扫描时方向性达17.0 dB。
创新点4:系统级能效优化 - 在1.9V供电下仅消耗3.4W总功率,通过协同优化射频波束成形架构、电源管理和散热设计,实现了整体系统的高能效比,为毫米波通信设备的长时间运行提供了可行性验证。
Abstract
This paper presents a W-band wafer-scale phased- array transmitter with high-ef ficiency on-chip antennas. The 4 4 array is based on an RF beamforming architecture with an equiphase distribution network and phased shifters placed on every element. The differential on-chip antennas are implemented using a 100 m thick quartz superstrate and with a simulated efficiency of 45 at 110 GHz. The phased array is designed with low mutual coupling between the elements and results in a stable active antenna impedance versus scan angle. The phased array is built in the Jazz SBC18H3 SiGe BiCMOS process, and is 6.5 6.0 mm . Measurements show two-dimensional pattern scanning capabilities with a directivity of 17.0 dB, an array gain of 26.5 dB at 110 GHz, and an EIRP of 23–25 dBm at 108–114 GHz. The power consumption is 3.4 W from a 1.9 V supply. To our knowledge, this work represents the first W-band wafer-scale phased array to-date. The application areas are in point-to-point communication systems in the 100–120 GHz range.