← 返回 JSSC 论文列表JSSC 2013第9期Other0.18μm SiGe BiCMOS
A 3325 V-Supply 2400 mV-Swing Single-Ended SiGe BiCMOS Driver With Programmable
一款3.3V供电、2400mV摆幅的单端SiGe BiCMOS电缆驱动器，支持可编程预加重。
3.3V供电, 2400mV摆幅, 270Mb/s-2.97Gb/s数据速率, 4kV HBM ESD防护
电缆驱动器SiGe BiCMOS可编程预加重高电压摆幅静电放电防护
▸采用开关电流源替代传统电流导向发射极耦合对
▸通过复制偏置控制输出摆幅而非电流镜
▸支持高达9dB的可编程预加重
Abstract
This paper presents a quad single-ended cable driver
delivering 2400 mV swing on each channel when double-termi-
nated with 75 loads from a 3.3 V termination supply. Fabricated
in 0.18 SiGe BiCMOS it implements a switched current source
to replace the conventional current steering emitter-coupled pair,
with output swing controlled via replica biasing in place of a cur-
rent mirror. All outputs meet industry-standard speci fications for
SD (270 Mb/s), HD (1.485 Gb/s), and 3G (2.97 Gb/s) data rates