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JSSC 2013第9期Power Management90nmCharge PumpPLL

A Spur-Frequency-Boosting PLL With a −74 dBc Reference-Spur Suppression in 90 nm Digital CMOS

提出一种新型PLL架构,通过频率提升技术实现74 dBc参考杂散抑制。
3.6 GHz, -74 dBc参考杂散抑制, (K/ω)比16.67, (ω/ω)比1/20
锁相环参考杂散频率提升CMOS低噪声
采用杂散频率提升模块将参考杂散频率提升至更高频段
打破传统PLL参数间的权衡关系
在不降低环路带宽或VCO增益的情况下实现杂散抑制
Abstract
An architectural solution for designing a low-refer- ence-spur PLL is proposed. A spur-frequency boosting block is in- serted between the phase-frequency detector and the charge pump to boost the charge pump input frequency. Hence, the spur at the reference frequency is eliminated and is frequency-boosted to a higher frequency, , at which the PLL gain is much less resulting in greater suppression. Quantitative analysis of the charge pump spurs is presented to clarify the different tradeoffs affecting the output spurs level. The proposed technique breaks the classical trade off between the different PLL parameters. It adds a degree of freedom in PLL design to reduce the reference spur level without reducing neither the loop bandwidth nor the voltage-controlled os- cillator’s gain (K ). A 3.6 GHz PLL prototype is fabricated using UMC 90 nm digital CMOS technology. A −74 dBc refer- ence-spur suppression is measured along with a (K /ω )r a t i o of 16.67 and a ( ω /ω ) ratio of 1/20. The proposed architec- ture provides additional spur suppression of 30 dB compared to a conventional PLL and, to the best of the authors’ knowledge, this PLL provides the best normalized reference-spur rejection in lit- erature. The prototype occupies 0.063 mm².