← 返回 JSSC 论文列表JSSC 2013第9期RF & Wireless0.25微米和0.13微米LNA
Broadband Millimeter-Wave LNAs (47–77 GHz and 70–140 GHz) Using a T-Type
本文介绍了两种宽带毫米波LNA的设计与特性分析，采用T型匹配拓扑实现宽带宽。
最大增益约23 dB，噪声系数低于7.2 dB，功耗52/54 mW
毫米波LNA宽带SiGe BiCMOST型匹配
▸采用T型匹配拓扑实现宽带宽
▸在0.25和0.13微米SiGe BiCMOS技术中实现
▸差分电路设计
Abstract
This paper presents the design and characterization of two broadband millimeter-wave LNAs realized in 0.25- ma n d 0.13- m SiGe BiCMOS technologies. Both circuits adopt a T-type matching topology to achieve the wide bandwidth (47–77 GHz for the -band LNA and 70–140 GHz for the -band LNA). The measured maximum gain is about 23 dB for both LNAs. The mea- sured noise figure (NF) is below 7.2 dB (from 50 to 75 GHz) for the -band LNA and below 7 dB (from 78 to 110 GHz) for the -band LNA. Both LNAs are differential circuits and consume 52/54 mW dc power. To the best of the authors’ knowledge, both LNAs achieve the widest bandwidth in corresponding frequency bands with very competitive gain and NF.