JSSC 2013第10期RF & Wireless45nm SOI CMOSPower AmplifierNeural Network Accelerator

Active Millimeter-Wave Phase-Shift Doherty Power Ampliﬁer in 45-nm SOI CMOS Amir

45纳米SOI CMOS中实现的45 GHz主动相移Doherty功率放大器，提高了增益和效率。

45 GHz, 8 dB增益, 20% PAE, 0.45 mm²面积

毫米波Doherty功率放大器SOI CMOS相移效率

▸使用放大器替代辅助放大器输入端的四分之一波长传输线

▸采用慢波共面波导(S-CPW)提高效率和增益

▸使用双堆叠FET放大器作为主放大器和辅助放大器

Abstract

A 45 GHz active phase-shift Doherty PA is proposed and implemented in 45-nm SOI CMOS. The quarter wave-length transmission line at the input of the auxiliary ampli ﬁer is replaced by an ampliﬁer, increasing the gain and PAE by more than 1 dB and 5%, while reducing the die area. Use of slow-wave coplanar waveg- uides (S-CPW) improves the PAE and gain by approximately 3% and 1 dB, and further reduces the die area. Two-stack FET am- pliﬁers are used as the main and auxiliary ampli ﬁers, allowing a