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Active Terahertz Imaging Using Schottky Diodes in CMOS Array and 860-GHz Pixel R
研究展示了一种基于CMOS工艺的肖特基二极管太赫兹成像阵列，适用于便携式太赫兹成像应用。
280GHz成像器峰值响应度5.1kV/W，最小NEP 29pW/√Hz；860GHz探测器NEP 42pW/√Hz
太赫兹成像肖特基二极管CMOS阵列无源像素集成成像器
▸使用未修改的CMOS工艺制造肖特基势垒二极管（SBD）
▸采用紧凑的无源像素阵列架构实现完全集成的280GHz 4×4成像器
▸通过减少二极管单元数量和利用贴片天线效率提升实现860GHz探测器
Abstract
Schottky-barrier diodes (SBD’s) fabricated in CMOS
without process modi fication are shown to be suitable for active
THz imaging applications. Usin g a compact passive-pixel array
architecture, a fully-integrated 280-GHz 4 4 imager is demon-
strated. At 1-MHz input modulation frequency, the measured
peak responsivity is 5.1 kV/W with variation among
the pixels. The measured minimum NEP is 29 .
Additionally, an 860-GHz SBD detector is implemented by re-
ducing the number of unit cells in the diode