JSSC 2013第10期Other0.45μm InP HBT与0.18μm CMOS

Introduction to the 34th Annual IEEE Compound Semiconductor Integrated

2012年化合物半导体集成电路研讨会论文集，涵盖GaAs、InP、GaN等技术的进展

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化合物半导体集成电路GaAsInPGaN

▸创新点1：高性能混合信号集成电路 - 该论文展示了在InP HBT与CMOS异质集成工艺中实现的13位1.33-Gbps DAC，其无杂散动态范围(SFDR)超过70 dB，属于电路创新，通过混合信号设计实现了高精度与高速的完美结合。

▸创新点2：异质集成工艺 - 采用0.45μm InP HBT与0.18μm CMOS的异构集成技术，属于工艺创新，允许在复杂系统中为每个电路功能选择最合适的晶体管技术，显著提升系统整体性能。

▸创新点3：宽禁带器件热管理 - 会议专题讨论了GaN等宽禁带器件的高级热管理技术，属于系统创新，解决了高功率密度下的散热难题，为器件可靠性和性能优化提供新方案。

▸创新点4：D波段无线通信芯片组 - 论文中提到的CMOS芯片组实现了110-170GHz D波段低功耗高速无线通信，属于系统级创新，拓展了毫米波通信的应用场景与能效边界。

Abstract

NAL OF SOLID-STATE CIRCUITS covers the 2012 Compound Semiconductor In- tegrated Circuit (CSIC) Symposium held in La Jolla, California, during October 14–17, 2012. For nearly 35 years, the CSIC Symposium (formerly known as the GaAs IC Symposiu m) has been the preeminent conferenc e for presenting the latest ad- vances in high-speed, high-perfor mance, integrated circuits and systems with primary focus on compound se miconductor tech- nologies such as those based on GaAs, InP , GaN, SiGe, ad- vanc