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Suppression of Flicker Noise Up-Conversion in a 65-nm CMOS VCO in the 30-to-36 G
通过串联电阻抑制65nm CMOS VCO中的闪烁噪声上转换。
65nm CMOS, 3.0-3.6 GHz
闪烁噪声CMOS VCO噪声抑制Groszkowski效应环路延迟
▸在MOSFET漏极串联电阻有效抑制闪烁噪声上转换
▸避免启动裕度下降和面积占用大的谐振滤波器
▸提出基于一阶闭合公式的简化设计流程
Abstract
Flicker noise up-conversio n in voltage-biased oscilla-
tors can be effectively suppressed by inserting resistances in series
to the drain of the transconductor MOSFETs. This solution avoids
the degradation of the start-up margin and the adoption of area-de-
manding resonant filters with proper tuning. This paper presents
a detailed theoretical analysis of 1/f noise up-conversion and quan-
titatively addresses the impact of two major contributions, namely
the Groszkowski effect and the l oop dela