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JSSC 2013第11期RF & Wireless80nm

A 40-MHz-to-1-GHz Fully Integrated Multistandard Silicon Tuner in 80-nm CMOS Jody Greenberg, Fernando De Bernardinis, Carlo Tinella, Antonio Milani, Jo hnny Pan, Paola Uggetti, Marco Sosio, Shaoan Dai, Samuel Er-Sh en Tang, Giovanni Cesura, Gabriele Gandol fi

一款40MHz至1GHz全集成多标准硅调谐器,采用80nm CMOS工艺,具有低噪声和高线性度。
80nm CMOS, 1.8/1.0V, 450mW, 2.7-4dB NF, +20/-13dBm IIP2/IIP3
硅调谐器多标准谐波抑制连续时间ΣΔ ADC数字校准
单RF端口覆盖全频段
谐波抑制混频器实现65dB以上谐波抑制
连续时间ΣΔ ADC减少基带处理
Abstract
A fully integrated, multistandard silicon tuner for the 42–1002-MHz band is presented. The tuner utilizes a single RF port for the whole band and requires a minimal number of ex- ternal components. It achieve s a NF of 2.7 to 4 dB and maximum gain IIP2/IIP3 of +20/–13 dBm, re spectively. It combines a tun- able RF filter and a harmonic rejection mixer to reject all har- monic channels by more than 65 dB. A filtering continuous time ΣΔ ADC minimizes baseband proces sing while supporting the ATSC blocking profile. Continuous background digital calibration allows more than 65 dB of image rejection. Various calibration methods are used to guarantee performance over PVT. The tuner consumes less than 450 mW from 1.8/1.0-V ana log/digital supplies and occu- pies an area of 2×2.8 mm².