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JSSC 2014第1期Memory0.13μm CMOS

A 3.4-pJ FeRAM-Enabled D Flip-Flop in 0.13- m CMOS for Nonvolatile Processing in

一种基于FeRAM的非易失性D触发器设计,用于断电不丢失数据的数字系统。
3.4 pJ每NVDFF的往返保存-恢复能量
非易失性存储器D触发器FeRAMASIC能量收集
创新点1:采用铁电电容器(FeRAM)实现非易失性D触发器设计,在0.13μm CMOS工艺下实现34pJ/bit的超低能耗存储,解决了传统易失性触发器在断电时数据丢失的问题。
创新点2:将非易失性D触发器无缝集成到标准ASIC设计流程中,通过兼容性优化和自动化脚本实现快速原型开发,验证了非易失性逻辑与现有EDA工具的兼容性。
创新点3:提出基于单比特能量状态指示器的智能电源管理架构,实现微秒级状态保存/恢复(3.4pJ/次),并在FIR滤波器测试芯片中验证了从4.8秒到1天的稳定断电恢复能力。
创新点4:通过21,000个NVDFF的统计测试证明10ppm的超低故障率,采用自适应写电压校准技术确保铁电存储的可靠性,满足嵌入式系统严苛的稳定性要求。
Abstract
In order to realize a digital system with no distinction between “on” and “off,” the computational state must be stored in nonvolatile memory elements. If the energy cost and time cost of managing the computational state in nonvolatile memory can be lowered to the microsecond and p icojoule-per-bit level, such a system could operate from unre liable harvested energy, never requiring a reboot. This work presents a nonvolatile D- flip-flop ( N V D F F )d e s i g n e di n0 . 1 3 - m CMOS that retains state in ferro- electric capacitors during sporadic power loss. The NVDFF is in- tegrated into an ASIC design flow, and a test-case nonvolatile FIR filter with an accompanying powe r management unit automati- cally saves and restores the state based on the status of a one-bit indicator of energy availability. Correct operation has been veri- fied over power-cycle intervals from 4.8 s to 1 day. The round-trip save-restore energy is 3.4 pJ per NVDFF. Also presented are sta- tistical measurements across 21 000 NVDFFs to validate the capa- bility of the circuit to achieve the requisite 10-ppm failure rate for embedded system applications.