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JSSC 2014第1期MemorySRAM

Application-Specific SRAM Design Using Output Prediction to Reduce Bit-Line Switching Activity and Statistically Gated Sense Ampli fiers for Up to 1.9 Lower Energy/Access

针对高相关性数据的应用,提出一种基于预测的SRAM设计以减少位线切换活动。
1.9倍能量/访问降低
SRAM位线切换能量效率预测设计感测放大器
创新点1:预测性位线切换活动减少方案(方法创新)。通过预测高度相关数据的模式,减少位线切换活动,从而降低功耗。该方法特别适用于视频和图像处理等数据相关性高的应用场景,能显著降低能量消耗。
创新点2:统计门控感测放大器技术(电路创新)。利用位线上的信号统计特性,动态控制感测放大器的开启和关闭,进一步减少能量消耗。该技术通过优化感测网络的能量使用,提升了SRAM的整体能效。
创新点3:应用特定SRAM设计(系统创新)。针对特定应用场景(如视频和图像处理)优化SRAM设计,结合预测性位线切换和统计门控感测放大器技术,实现了高达1.9倍的能量/访问降低,展示了应用特定设计的显著优势。
创新点4:电压缩放结合优化设计(系统创新)。在应用特定设计的基础上,结合电压缩放技术,进一步提升了SRAM的能效,展示了多层次优化在低功耗设计中的潜力。
Abstract
This paper presents an application-speci ficS R A M design targeted towards applications with highly correlated data (e.g., video and imaging applications). A prediction-based reduced bit-line switching activity scheme is proposed to reduce switching activity on the bit-lines based on the proposed bit-cell and array structure. A statistically gated sense-ampli fier approach is used to exploit signal statistics on the bit-lines to reduce energy con- sumption of the sensing networ k. These techniques provide up to 1.9 lower energy/access when compared with an 8T SRAM. These savings are in addition to the savings that are achieved through voltage scaling and demonstrate the advantages of an application-specificS R A Md e s i g n .