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A Low Phase Noise Oscillator Principled on Transformer-Coupled
通过硬限幅和波形恢复技术实现低相位噪声的8 GHz CMOS振荡器,适用于基站应用。
8 GHz, 65 nm CMOS, 32 mA @ 1.5 V, 相位噪声-147.7 dBc/Hz @ 1 MHz偏移
低相位噪声振荡器变压器耦合硬限幅基站应用
▸采用变压器耦合硬限幅技术降低相位噪声
▸使用调谐变压器恢复基频成分
▸通过过驱动晶体管设计减少电路噪声对振荡相位的影响
Abstract
Reduced phase noise conversion in a monolithic oscillator suitable for basestation applications is realized by hard limiting and subsequently restoring the resonating waveform. Overdriven transistors hard lim it the drain voltage swing and it is shown analytically that this desensitizes the oscillation phase to circuit noise. A pair of tuned, 1:2 step-up transformers in the feedback path restore the fundame ntal frequency component with sufficient gain to overdrive the transistors forming the oscillator core, with greater selectivity than an equivalent LC tank. The 8 GHz, 65 nm CMOS oscillator prototype targeting the GSM-900 base-station speci fication consumes 32 mA from 1.5 V. Normal- ized to 915 MHz, the phase noise measured at 1 MHz offset is –147.7 dBc/Hz, validating predictions from theory and simulation. The measured frequency pushing is less than 16 MHz/V.