← 返回 JSSC 论文列表JSSC 2014第7期RF & Wireless55nmDAC
A Current-Mode, Low Out-of-Band Noise LTE Transmitter With a Class-A/B
提出一种满足LTE要求的低带外噪声电流模式发射机，采用AB类功率混频器实现高效率与低噪声。
55nm CMOS, 1.8V, 96mW/34mW功耗, 158dBc/Hz RX-band噪声
LTE发射机电流模式AB类混频器带外噪声CMOS
▸创新点1：电流模式操作（电路创新） - 采用全电流操作的模拟基带电路，显著降低带外噪声并提高功率效率，支持LTE10和LTE20标准，带外噪声低至-158 dBc/Hz @ 30 MHz偏移。
▸创新点2：AB类功率混频器（电路创新） - 结合A/B类功率混频器设计，动态调整工作模式以优化效率，在4 dBm和10 dBm输出功率下分别仅消耗96 mW和34 mW。
▸创新点3：直接馈送双二次滤波器（系统创新） - 通过电流模式双二次滤波器直接驱动功率混频器，在信号上变频前有效滤除DAC镜像噪声，确保ACLR始终低于-42 dBc。
▸创新点4：SAW-less架构（系统创新） - 无表面声波滤波器设计简化系统复杂度，通过电流域处理实现高集成度，采用55 nm CMOS工艺验证可行性。
Abstract
A complete SA W-less transmitter meeting LTE requirements is presented. High power ef ficiency and low out-of-band noise are obtained e xploiting fully current oper- ation of an analog baseband followed by a class-A/B power mixer. Out-of-band emissions are limited by filtering noise and DAC replicas right before the signal up-conversion through a current-mode Biquad feeding directly the power-mixer. The trans- mitter, implemented in 55 nm CMOS technology, shows 158 dBc/Hz RX-band noise emission at 30 MHz offset for LTE10, while consuming 96 and 34 mW from the single 1.8 V power supply at 4 and 10 dBm output power, respect ively. ACLR is always below 42 dBc up to 4 dBm for both LTE10 and LTE20.