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JSSC 2014第7期Other180 nm CMOS

Introduction to the Special Issue on the 39th European Solid-State Circuits Conference (ESSCIRC)

IEEE JSSC特刊介绍第39届欧洲固态电路会议的精选论文,涵盖模拟和数字电路领域。
78 pW平均功耗,1 bps占空比数据率
固态电路模拟电路数字电路RF系统传感器
创新点1:窄带发射器和天线系统 - 该系统采用180 nm CMOS工艺,实现了78 pW的平均功耗,适用于1 bps的低数据速率应用,显著降低了功耗,适用于低功耗物联网设备。
创新点2:直接RF功率振荡器拓扑 - 该拓扑结构通过将天线同时用作辐射和共振元件,简化了电路设计,减少了组件数量,提高了系统效率,支持2.4 GHz的OOK和FSK调制。
创新点3:激进功率门控技术 - 该技术通过单级架构和功率门控,将发射器的待机功耗降低至39.7 pW,显著提升了系统的能效比,适用于长时间待机的应用场景。
创新点4:细粒度变化感知动态Vdd跳跃自适应电压和频率缩放架构 - 该架构在32 nm多处理器SoC中实现了高达18.2%的能源节省,通过动态调整电压和频率,优化了系统性能和功耗。
Abstract
ssue of the IEEE J OURNAL OF SOLID-STATE CIRCUITS traditionally covers a selection of papers that were presented at the European So lid-State Circuits Conference (ESSCIRC). This Special Issue c ontains extended papers from the 39th ESSCIRC, held September 16–20, 2013, in Bucharest, Romania. The conference was jointly organized with the Euro- pean Solid-State Device Res earch Conference (ESSDERC). The papers in this issue were selected from all papers pre- sented at ESSCIRC’2013, bas ed on the fe