← 返回 JSSC 论文列表JSSC 2014第8期RF & Wireless0.18μm
A Fully-Integrated 71 nW CMOS Temperature Sensor for Low Power Wireless Sensor Nodes Seokhyeon Jeong, Student Member , IEEE , Zhiyoong Foo, Y oonmyung Lee ,M e m b e r, IEEE
提出一种全集成71nW CMOS温度传感器,适用于低功耗无线传感系统。
71nW功耗/0.3°C精度/2.2nJ每转换
CMOS温度传感器超低功耗无线传感节点全集成电流源
▸创新点1:新型低电压传感元件设计(电路创新)。通过优化传感元件结构,仅需75mV工作电压即可实现温度检测,相比传统方案(需数百mV至1V)显著降低功耗,同时节省芯片面积。
▸创新点2:全集成化架构(系统创新)。无需外部参考源,通过内部温度无关/相关电流源与振荡器、计数器协同生成数字温度码,简化系统设计并提升可靠性。
▸创新点3:超低功耗与微型化(性能创新)。在0.18μm CMOS工艺下实现71nW功耗(2.2nJ/次转换)和0.09mm²面积,满足无线传感节点对能源效率与尺寸的严苛需求。
▸创新点4:快速高精度转换(方法创新)。采用30ms转换时间达成±0.3°C(rms)分辨率,通过两点校准实现0°C-100°C范围内±1°C精度,平衡速度与测量准确性。
Abstract
We propose a fully-integrated temperature sensor for battery-operated, ultra-low power microsystems. Sensor operation is based on temperature independent/dependent current sources that are used with oscillators an d counters to generate a digital temperature code. A conventional approach to g enerate these cur- rents is to drop a temperature sensitive voltage across a resistor. Since a large resistance is required to achieve nWs of power con- sumption with typical voltage levels (100 s of mV to 1 V), we intro- duce a new sensing element that outputs only 75 mV to save both power and area. The sensor is implemented in 0.18 mC M O Sa n d occupies 0.09 mm while consuming 71 nW . After 2-point calibra- tion, an inaccuracy of is achieved across 0 Ct o 100 C. With a conversion time of 30 ms, 0.3 C (rms) resolution is achieved. The sensor does not requi re any external references and consumes 2.2 nJ per conversion. The sensor is integrated into a wireless sensor node to demonstrat e its operation at a system level.