A - B a n dF o u r - E l e m e n tB u t l e rM a t r i xi n0 . 1 3µ m SiGe BiCMOS Technology Mohamed Elkhouly, Student Member , IEEE,Y a n f e i M a o, Student Member , IEEE,C h afik Meliani, Member , IEEE, J.

Abstract

This paper presents the design and characterization of a 220–240 GHz four-element Butler matrix beam switching chip. It is realized in 0.13 µm SiGe BiCMOS technology. The chip fea- tures four 220 GHz ampli fiers with 9 dB of gain followed by the Butler matrix core. A single-pole -four-throw (SP4T) switch is inte- grated to switch between the different beam directions. Finally an amplifier is used to compensate the losses of the matrix core and the switch. The chip exhibits a 2 dB of insertion loss and draws 104 mA from a 3.3 V supply. It also shows maximum phase error of 15° from the ideal phase states and less than 4 dB rms amplitude variations. The chip occupies 1.5 × 2.4 mm 2 silicon area.