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Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection X. Shawn Wang , Student Member , IEEE, Xin Wang, Fei Lu, Chen Zhang, Zongyu Dong ,L i W a n g
本文提出了一种8.5 kV ESD保护的SP10T开关设计，适用于多频段智能手机。
0.18μm CMOS, 36.4/34.2 dBm, 0.48/0.81 dB, 43/40 dB
ESD保护SP10T开关多频段GSMWCDMA
▸创新点1：8.5 kV ESD保护的SP10T开关 - 该论文首次实现了8.5 kV静电放电保护的SP10T开关，显著提高了开关的可靠性和耐用性，适用于高功率GSM和多频段WCDMA智能手机应用。这一技术突破在ESD保护领域具有重要价值。
▸创新点2：串并联拓扑结构 - 采用独特的串并联拓扑结构设计，实现了时间分集双工(TDD)和频分双工(FDD)模式的高效切换，同时优化了插入损耗(0.48/0.81 dB)和Tx-Rx隔离度(43/40 dB)，性能优于传统设计。
▸创新点3：ESD与开关协同设计技术 - 开发了ESD保护与开关电路的协同设计方法，通过整体芯片优化，实现了ESD保护和开关性能的最佳平衡，这一系统级创新提高了整体电路的可靠性和性能。
▸创新点4：前馈电容(FFC)和AC浮动偏置技术 - 采用前馈电容和AC浮动偏置技术进一步提高了开关的线性度，这一电路创新解决了高功率应用中的线性度挑战，为高频开关设计提供了新的解决方案。
Abstract
This paper discusses concurrent design and anal- ysis of the first 8.5 kV electrostatic discharge (ESD) protected single-pole ten-throw (SP10T) transmit/receive (T/R) switch for quad-band (0.85/0.9/1.8/1.9 GHz) GSM and multiple-band WCDMA smartphones. Implemented in a 0.18 mS O IC M O S , this SP10T employs a series-shun t topology for the time-divi- sion duplex (TDD) transmitting (Tx) and receiving (Rx), and frequency-division duplex (FDD) transmitting/receiving (TRx) branches to handle the high G SM transmitter power. The measured , insertion loss and Tx-Rx isolation in the lower/upper bands are 36.4/34.2 dBm, 0.48/0.81 dB and 43/40 dB, respectively, comparable to commercial products with no/little ESD protection in high-cost SOS and GaAs technologies. Feed-for- ward capacitor (FFC) and AC- floating bias techniques are used to further improve the linearity. An ESD-switch co-design tech- nique is developed that enables s imultaneous whole-chip design optimization for both ESD protection and SP10T circuits.