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Introduction to the Special Section on the 2013 IEEE Bipolar/BiCMOS Circuits and
2013 IEEE Bipolar/BiCMOS会议精选论文，涵盖SiGe BiCMOS技术中的ADC和CDR设计创新。
SFDR 79 dBc/66 dBc, 3.7位有效分辨率@10 GHz, 100 GHz时钟提取
SiGe BiCMOS高速ADC时间交织注入锁定振荡器CDR
▸12位1.6 GS/s流水线ADC采用4路时间交织分层结构和主从T/H提升动态性能
▸6位20 Gs/s闪存ADC采用新型比较器布局和参考梯概念减少高速失真
▸100 Gb/s CDR使用注入锁定振荡器生成100 GHz时钟
Abstract
the IEEE JOURNAL OF SOLID-STATE
CIRCUITS is a selection of papers presented at the 2013
IEEE Bipolar/BiCMOS Circ uits and Technology Meeting
(BCTM) held from September 30th to October 3rd in Bordeaux,
France. The five papers selected reflect the recent advances in IC
designs implemented in BiCMOS and SiGe technologies.
The Special Section starts w ith the paper by El-Chammas et
al., which depicts a 12 bit 1.6 GS/s pipeline ADC designed in
a 18 nm SiGe BiCMOS, consisting of a 4-way time-interleaved