← 返回 JSSC 论文列表JSSC 2014第10期RF & Wireless45nm SOI CMOSDAC
A High Modulation Bandwidth, 110 GHz Power-DAC Cell for IQ Transmitter Arrays With Direct Amplitude and Phase Modulation Andreea Balteanu, Student Member , IEEE , Stefan Shopov , Student Member , IEEE ,a n d Sorin P . V oinigescu, Senior Member , IEEE
研究毫米波功率DAC发射机架构的最大波特率及W波段可扩展性。
29 GHz OOK和BPSK调制带宽，2×44 Gb/s BPSK+OOK数据速率，7.5 pJ/bit能效，12 dBm输出功率
毫米波功率DACIQ发射机调制带宽能效
▸创新点1：110 GHz功率DAC单元的创新设计，采用45 nm SOI CMOS工艺实现，支持高达29 GHz的OOK和BPSK调制带宽，显著提升了毫米波频段的信号处理能力。
▸创新点2：2×2 IQ发射机阵列的架构创新，通过阵列化设计实现了12 GHz带宽内的低EVM（9.0%），为多通道毫米波通信系统提供了高集成度解决方案。
▸创新点3：高调制带宽技术突破，实现了2×44 Gb/s的BPSK+OOK数据速率，能量效率达到7.5 pJ/bit，输出功率为12 dBm，适用于100–110 GHz频段的高速率通信。
▸创新点4：系统级创新，通过功率-DAC发射机架构的可扩展性研究，验证了其在W波段的适用性，为未来毫米波通信系统的设计提供了重要参考。
Abstract
This paper studies the maximum Baud rate and the scalability to the W-Band of the mm-wave power-DAC transmitter architecture. Proof-of-concept implementations of a single DAC lane and of a 2×2 IQ transmitter array are reported in 45 nm SOI CMOS. The DAC cell achieved 29 GHz OOK and 29 GHz BPSK modulation bandwidth and 2×44 Gb/s BPSK+OOK data rates for carriers in the 100–110 GHz range. The corresponding energy ef- ficiency is 7.5 pJ/bit at an output power of 12 dBm. For the 2×2 IQ array, an EVM of 9.0% is estimated over a 12 GHz bandwidth, from large signal power and S-p arameter phase measurements.