Low Distortion 50 GSamples/s Track-Hold and Sample-Hold Amplifiers

Abstract

We report 50 GSamples/s track-hold amplifier (THA) and sample-hold ampli fier (SHA) designed and fabricated in a 250 nm InP double heterojunctio n bipolar transistor (DHBT) technology. Because the base-emitter junction reverse breakdown voltage is low in the process technology employed, the circuits use a base-collector jun ction diode as the switching element in the signal path. Operating with 5Va n d 2.5 V supplies, the THA achieves 16 dBm input-referred third-order intercept (IIP3) at signal fre quencies below 22 GHz, while the SHA achieves IIP3 17 dBm for 2–22 GHz inputs.