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A 13.56 MHz 40 mW CMOS High-Ef ficiency Inductive Link Power Supply Utilizing On-Chip Delay-Compensated V oltage Doubler Rectifier and Multiple LDOs for Implantable
提出一种13.56MHz CMOS高效电感链路电源,用于植入式医疗设备,传输效率达76.3%,功率转换效率85%。
13.56MHz, 20mA输出电流, 76.3%传输效率, 85%功率转换效率, 384mV压降
植入式医疗设备电感链路电源CMOS高效能电压倍增器
▸螺旋形电感线圈设计节省空间并提高效率
▸带比较器的主动电压倍增器实现延迟补偿
▸集成三个LDO分别优化模拟、数字和参考电压电路性能
Abstract
In this paper, a 13.56 MHz CMOS near-field inductive link power supply (ILPS) that can deliver 20 mA output current for implantable medical devices (IMDs ) is proposed and fabricated. In the proposed ILPS, the pair of inductive link coils is constructed in the sp iral shape with a ferrite core to save space and increase ef- ficiency. Experimental results have shown that the near- field coils can transmit power at the resonant frequency of 13.56 MHz with the transmission ef ficiency up to 76.3%. The CMOS power regu- lator is composed of active voltage doubler recti fier (VD) and low- dropout regulators (LDOs). In th e active VD with the comparator, the input offset voltage is adjustab le for delay compensation and a start-up control circuit is added to achieve robust start-up mecha- nism. On-chip delay compensation control with SR-latches is pro- posed to prevent from error glitch switching on offset voltage con- trol and achieve accurate delay compensation so that the reverse current conduction can be avoided and the ef ficiency can be in- creased. Three fully-integrated LDOs with recti fier output voltage of 2 V to 1.8 V are realized for analog (ALDO), digital (DLDO), and reference-voltage (RLDO) circuits. Thus the performance of individual LDO can be optimized. The measured output ripple voltage of the active VD is 10.4 mV. The power conversion ef fi- ciency (PCE) is 85% under 20 mA output current. The measured dropout voltage is 384 mV. As compared with other designs, the proposed