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JSSC 2014第12期Image Sensors

A0 . 5 3T H zR e c o nfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications Ullrich R. Pfeiffer , Senior Member , IEEE , Y

本文介绍了一种高功率0.53 THz可重构光源模块,适用于太赫兹成像应用。
总辐射功率1 mW,每像素平均功率62.5 µW,EIRP每像素25 dBm
太赫兹光源SiGe BiCMOS可重构模块环形天线三推振荡器
单芯片SiGe BiCMOS集成16个光源像素
每个像素包含环形天线和三推振荡器
模块总辐射功率可达1 mW
Abstract
This paper presents a high-power 0.53 THz source module with programmable diversi ty to adjust the brightness and the direction of light to obtain the desired diffuse lighting condi- tions in THz imaging applications. The source module consists of a single SiGe BiCMOS chip which operates an array of 16 source- pixel incoherently. Each source pixel consists of a primary on-chip ring-antenna and two triple-push oscillators locked 180° out-of- phase. The module provides a total radiated power of up to 1 mW (0 dBm) with 62.5 µW (–12 dBm) per source pixel on average and an EIRP per pixel of 25 dBm. The circuit layout is scalable in size and output power. The chip consumes up to 2.5 W from a 2.4 V supply and 3.2 mW from a digital 1.2 V supply respectively. The module includes a secondary silicon lens, is programmable through a CPLD, and supplied from a USB port. The THz radiation can be recorded with a CMOS 1 k-pixel THz video camera and represent an all silicon solution for real-time active THz imaging.