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JSSC 2014第12期Data Converters32nm CMOS SOITime-Interleaved ADC

A6 9 . 5m W2 0G S / s6 bT i m e - I n t e r l e a v e dA D C With Embedded Time-to-Digital Calibration in 32 nm CMOS SOI

32nm CMOS SOI工艺下实现的20GS/s 6位时间交织ADC,嵌入时间数字转换器校准时序偏差,功耗69.5mW。
20GS/s, 6bit, 30.7dB SNDR, 69.5mW, 124J/conv-step FoM
时间交织ADC时钟失配校准动态偏移补偿低功耗设计片上背景校准
嵌入式时间数字转换器校准时序偏差
利用工艺失配随机性补偿时钟失配和动态偏移误差
低复杂度片上背景校准增益、偏移和延迟失配
Abstract
A 20 GS/s 6b time-interleaved ADC is implemented in 32 nm CMOS SOI with an embedded time-to-digita l converter to sense timing skew, and the rand omness of process mismatch is exploited to compensate for the c lock misalignment and dynamic offset errors of comparators that occur durin g high-speed opera- tion. To achieve low-power consumption at high-speed operation with small-size transistors, a low -complexity on-chip calibration reduces gain, offset, and delay mismatches in background. With the timing skew calibration, the spurs due to clock misalignment are reduced by 20 dB. The proposed ADC achieves an SNDR of 30.7 dB at Nyquist frequency and cons umes only 69.5 mW with a figure-of-merit of 124 J/conv-step.