← 返回 JSSC 论文列表JSSC 2015第1期Clocking & PLLs180nm CMOS
A 3 ppm 1.5 × 0.8 mm 2 1.0 µA 32.768 kHz MEMS-Based Oscillator
首款32kHz低功耗MEMS振荡器，用于替代晶体振荡器，适用于空间受限移动设备。
1.5×0.8 mm², 0.9 µA (XO), 1.0 µA (TCXO), ±3 ppm (TCXO), 1.4V-4.5V
MEMS振荡器低功耗温度补偿32kHz移动设备
▸首款32kHz低功耗MEMS振荡器
▸支持温度补偿校准（TCXO）
▸集成低功耗维持电路、分数N PLL、温度传感器和数字控制
Abstract
This paper describes the first 32 kHz low-power MEMS-based oscillator in prod uction. The primary goal is to provide a small form-factor oscillator (1.5 × 0.8 mm 2)f o ru s ea s a crystal replacement in space-constrained mobile devices. The oscillator generates an output frequency of 32.768 kHz and its binary divisors down to 1 Hz. The frequency stability over the industrial temperature range (–40 °C to 85 °C) is ±100 ppm as an oscillator (XO) or ±3 ppm with optional calibration as a tempera- ture compensated oscillator (TCXO). Supply currents are 0.9 µA for the XO and 1.0 µA for the TCXO at supply voltages from 1.4 V to 4.5 V. The MEMS resonator is a capacitively-transduced tuning fork at 524 kHz. The circuitry is fabricated in 180 nm CMOS and includes low power sustaining circuit, fractional-N PLL, temperature sensor, digital control, and low swing driver.