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JSSC 2015第2期Data Converters45nmSAR ADCDAC

A Decision-Error-Tolerant 45 nm CMOS 7b 1 GS/s Nonbinary 2b/Cycle SAR ADC Hyeok-Ki Hong , Student Member , IEEE ,W a nK i m , Student Member , IEEE , Hyun-Wook Kang, Sun-Jae Park, Michael Choi, Ho-Jin Park

45nm CMOS工艺下7位1GS/s非二进制2b/周期SAR ADC,具有容错能力。
45nm CMOS, 1.25V, 1GS/s, 41.6dB SNDR, 6 ENOB, 80fJ/conversion-step, 7.2mW
SAR ADC非二进制容错高速低功耗
双DAC结构消除采样偏移
非二进制决策方案提升速度和鲁棒性
动态寄存器和直接DAC控制减少逻辑延迟
Abstract
A compact decision-error-tolerant 2b/cycle SAR ADC architecture is presented. Two DACs with different desi g- nated functions, SIG-DAC an d REF-DAC, are implemented to make the structure compact and to eliminate the sampling skew issue. Use of a nonbinary decision scheme with deci sion redundan- cies not only increases the ADC speed with a relaxed DAC settling requirement but also makes the performance robust to reference fluctuations and comparator offset variations. The proposed dynamic register and direct DAC control scheme enhance the conversion speed by minimizing logic delay in the SAR decision loop. The proposed comparator-error det ection with digital error correction scheme enhances high-speed ADC performance. A prototype 7b ADC fabricated in a 45 nm CMOS process operates at a sampling rate of 1 GS/s under a 1.25 V supply while achieving a peak SNDR of 41.6 dB and maintaining an ENOB higher than 6 up to 1.3 GHz signal frequency. The FoM under a 1.25 V supply is an 80 fJ/conversion-step with a po wer consumption of 7.2 mW.