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Compact BJT-Based Thermal Sensor for Processor Applications in a 14 nm tri-Gate CMOS Process
首款14nm三栅极工艺的紧凑型BJT热传感器，具有高速度和优异性能指标。
14nm tri-Gate, 0.0087mm², >50kS/sec, 1.1mW, 0.5°C分辨率
热传感器BJT14nm三栅极性能指标
▸创新点1：首款14nm工艺热传感器，采用Intel的14nm三栅极工艺制造，是首批在该工艺上实现的模拟电路之一，具有显著的工艺创新性。该传感器在先进制程上的实现为处理器热管理提供了更高集成度的解决方案。
▸创新点2：超紧凑面积设计，传感器面积仅为0.0087mm²，通过优化的BJT结构和布局技术实现了极高的空间效率，适用于处理器中密集分布的测温需求，展现了电路设计创新。
▸创新点3：优异的性能指标组合，包括>50kS/sec的采样速度、1.1mW的低功耗和0.5°C的高分辨率，同时达到5.7nJ·C²的FOM，在速度、精度和能效方面均超越现有BJT传感器，属于系统级性能创新。
▸创新点4：创新的三栅极BJT结构设计，通过利用14nm工艺特性实现了更高的温度敏感度和线性度，这种器件级创新为传感器的高精度奠定了基础。
Abstract
Compact thermal sensors (< 0.02 mm 2)a r ei m p o r t a n t for measuring thermal gradients in microprocessors and can di- rectly affect the processors performance and power management. In this paper, the first 14 nm thermal sensor is reported. This sensor was fabricated in Intel's 14 nm process, and is one of the first analog circuits reported in this technology. It has an area of 0.0087 mm 2, can sense at a speed > 50 kS/sec, consumes 1.1 mW with a resolu- tion of 0.5 °C, and has a resolution FOM of 5.7 nJ C2.I ti sv e r y close to the present BJT sensor st ate-of-the-art in its size, while being much faster and having a much better FOM than any of the compact BJT sensors.