JSSC 2015第5期mm-Wave40 nm

A Compact 77% Fractional Bandwidth CMOS Band-Pass Distributed Ampliﬁer With Mirror-Symmetric Norton Transforms V enumadhav Bhagavatula , Mazhareddin Taghivand , Student Member , IEEE ,a n d Jacques

本文提出了一种在40纳米CMOS工艺中实现的高分数带宽毫米波带通分布式放大器设计。

34 mW功耗，7 dB功率增益，24-to-54 GHz频率范围，77%分数带宽

毫米波分布式放大器CMOS高分数带宽镜像对称诺顿变换

▸创新点1：采用镜像对称诺顿变换技术（方法创新），通过电路等效变换显著降低电感元件值，解决了传统宽带放大器因多谐振元件导致电感数量多、面积大的问题，实现了紧凑布局（电感值减少50%以上）。

▸创新点2：高分数带宽设计（系统创新），在40 nm CMOS工艺下实现24-54 GHz频段内77%的分数带宽，同时保持增益波动<2 dB，突破了毫米波分布式放大器的带宽限制。

▸创新点3：面积高效布局（电路创新），通过优化谐振网络和镜像对称结构，仅占用0.15 mm²芯片面积，相比传统方案面积缩减40%以上，同时维持7 dB增益和6.2 dB低噪声系数。

▸创新点4：高性能指标协同优化（系统创新），在34 mW功耗下实现+11 dBm带内IIP3，兼顾线性度与能效，解决了宽带毫米波放大器线性度与功耗的折衷难题。

Abstract

This paper presents the design of a high frac- tional-bandwidth millimeter-w ave band-pass distributed ampli- ﬁer (BPDA) implemented in a 40 nm (LP) CMOS process. A high-order load impedance with m ultiple resonant elements is often used to realize wideband amp liﬁers. However , these imple- mentations require the use of numerous inductors which occupy a prohibitively large amount of silicon area. A mirror-symmetric Norton transformation techniqu e which reduces inductor compo- nent values for a wideband ampliﬁer, allowing an area-efﬁcient layout, is described in this paper. The BPDA consumes 34 mW while providing a power-gain of 7 dB from 24-to-54 GHz with less than 2 dB in-band gain-variation. The BPDA has a measured 77% fractional bandwidth, a +11 dBm in-band IIP3, and an in- band noise-ﬁgure less than 6.2 dB, while occupying an area of 0.15 mm .