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JSSC 2015第5期RF & Wireless65nm

Introduction to the Special Section on the 2014 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

2014年IEEE射频集成电路研讨会精选论文,涵盖无线收发器、射频前端、毫米波设计等。
7 dB功率增益,24–54 GHz,34 mW,IIP3 11 dBm,噪声系数6.2 dB
无线收发器射频前端毫米波设计频率合成器高速数据收发器
创新点1:高分数带宽带通分布式放大器,通过减少电感元件值实现面积高效布局,提供7 dB功率增益,频率范围24-54 GHz,功耗34 mW,IIP3为11 dBm,噪声系数6.2 dB。
创新点2:数字极化Doherty功率放大器,采用65 nm CMOS工艺,提升背偏操作效率,灵活权衡效率与线性度,增强天线失配鲁棒性,1Msymbol/s QPSK信号下,RMS EVM为3.5%,平均输出功率23.5 dBm,漏极效率26.8%。
创新点3:高效背偏操作设计,应用于25 dBm类D输出相位放大器,采用45 nm CMOS工艺,通过交叉桥组合器提升背偏操作效率,适用于900 MHz和2.4 GHz频率,测试结果优异。
Abstract
the IEEE J OURNAL OF SOLID-STATE CIRCUITS consists of a selection of pa- pers that were presented at the 2014 IEEE Radio Frequenc y Integrated Circuits Symposium, held from June 1–3, 2014, in Tampa, FL, USA. The symposium is co-located with the IEEE MTT-S International Microwave Sympos ium (IMS), each year, and is a premier international venue that covers the latest advances in RF and microwave circuits and systems. The 2014 RFIC symposium featured 102 publ ications contributed by industry and a