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A Noise-Cancelling Receiver Resilient t oL a r g eH a r m o n i cB l o c k e r s
提出一种增强型噪声消除接收器架构,提升对谐波干扰的抵抗能力。
28nm CMOS
噪声消除谐波干扰接收器被动混频28nm
▸创新点1:采用双路被动混频下变频路径,通过并行处理信号显著提升接收机的抗干扰能力和噪声性能,实现了低噪声系数(NF < 3dB)和0 dBm带外阻塞容忍度。
▸创新点2:提出谐波阻塞抑制技术,通过动态增益控制和谐波频率检测模块,防止谐波干扰在基带TIA中经历大增益(增益降低>20dB),提升对整数倍LO频率阻塞的鲁棒性。
▸创新点3:分别优化电压驱动主路径和电流驱动辅助路径的阻抗匹配方案,主路径采用高线性度跨导放大器,辅助路径集成噪声抵消环路,使整体IIP3提升至+15dBm。
▸创新点4:在28nm工艺中实现全差分原型芯片验证,通过片上谐波陷波滤波器和自适应偏置技术,在2.4GHz频段下将谐波阻塞抑制比(HBRR)优化至40dB。
Abstract
By employing two passive-mixer-based downconver- sion paths, a recently proposed noise cancelling receiver achieves a low-noise figure and tolerates most out-of-band blockers up to 0 dBm with little performance de gradation. However, like most wideband passive-mixer-based designs, the architecture is far less tolerant of harmonic blockers, that is blockers located at or around precise integer multiples of the LO frequency . These blockers are problematic because they are d ownconverted inside the band- width of the baseband TIAs and, so, experience significant on-chip voltage gain. This work presents an enhanced noise-cancelling architecture that prevents harmonic blockers experiencing large on-chip gain, thereby boosting th e receiver's resilience to such blockers. It will be shown that separate techniques are required for the voltage-driven main path and the current-driven auxiliary path. To validated these ideas, single-ended and fully-differential prototypes were fabricated in 28 nm silicon.