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JSSC 2015第7期RF & Wireless40nm

A mm-Precise 60 GHz Transmitter in 40 nm CMOS for Discrete-Carrier Indoor Localization Paramartha Indirayanti, Student Member , IEEE , Tuba Ayhan , Student Membe r , IEEE, Marian V erhelst, Member , IEEE,W i m D e h a e n e, Senior Member , IEEE

40纳米CMOS工艺下实现毫米级精度的60GHz室内定位发射机
40nm CMOS, 0.9V, 5.4μs符号持续时间, 0.7-2.7mm精度, 5m测量距离
60GHz发射机室内定位毫米级精度多载波CMOS
6GHz宽频带的高效频率规划
基于相位到达时间算法的数字分频多载波信号生成
降低PAPR以提高功率放大器效率
Abstract
This paper presents a multicarrier 60 GHz trans- mitter for distance measurement ( ranging) in an indoor wireless localization system, achieving mm-precision with high update rate. The architecture comprise s a baseband subcarrier gener- ator, an upconverter, and a power amplifier. There are three key innovations, all stemming from careful hardware-algorithm co-design: 1) efficient frequency planning of the 6 GHz-wide band; 2) power-efficient multicarrier signal generation by means of dig- ital frequency divisions exploiting the phase-based time-of-arrival ranging algorithm; and 3) PAPR reduction to enable efficient operation of the power amplifier. By implementing these key techniques, 0.7–2.7 mm precisi on is achieved over 5 m measured distance with 5.4 s symbol duration. During operation, the core digital subcarrier generator gen erates 16 non-equidistant sub- carriers from a 3 GHz input clock, while consuming an average p o w e ro f1 . 8m Wo u to f0 . 9 Vs u pply. The upconverter and the power amplifier altogether consume around 127 mW. The total area of the transmitter is 1.1 mm . The chip is fabricated in a 40nm general purpose CMOS process.