← 返回 JSSC 论文列表JSSC 2015第8期RF & Wireless65nmVCO
350 mV 5 GHz Class-D Enhanced Swing Differential and Quadrature VCOs in 65 nm C
提出了一种在65nm CMOS工艺下实现的新型低电压增强摆幅Class-D VCO，工作频率5GHz，最低供电电压300mV。
65nm CMOS, 0.35V, 5GHz, 137.1dBc/Hz@3MHz, 2.1mW
低电压VCOClass-D振荡器增强摆幅正交输出5GHz
▸创新点1：低电压工作（300mV供电） - 该VCO在300mV的超低供电电压下工作，显著降低了功耗，适用于低功耗应用场景，如物联网设备。
▸创新点2：增强摆幅Class-D结构 - 采用增强摆幅的Class-D结构，提高了输出信号的摆幅，从而改善了相位噪声性能，达到137.1 dBc/Hz @ 3 MHz offset。
▸创新点3：差分与正交输出变体 - 设计了差分和正交两种输出变体，增加了电路的灵活性和适用性，适用于多种射频应用场景。
▸创新点4：高FoM值 - 该VCO的最高FoM值达到198.3 dBc/Hz，表明其在低功耗和高性能之间取得了优异的平衡。
Abstract
A new enhanced swing class-D VCO which operates
from a supply voltage as low as 300 mV is presented. The archite c-
tural advantages are described alo ng with an analysis for the oscil-
lation frequency. Prototype differential and quadrature variants of
the proposed VCO have been implemented in a 65 nm RF CM OS
process with a 5 GHz VCO osci llation frequency. At a 350 mV
supply, the measured phase noise performance for the quadrature
VCO with a 5% tuning range is
137.1 dBc/Hz at 3 MHz o ffset
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