← 返回 JSSC 论文列表JSSC 2015第8期Other55nm
Integrated 105 dB SNR, 0.0031% THD+N Class-D Audio Amplifier With Global Feedback and Digital Control in 55 nm CMOS
该论文提出了一种采用55纳米CMOS工艺的第四阶PWM闭环D类音频放大器,通过数字域反馈环路设计实现了高信噪比和低失真。
105 dBA SNR, 0.0031% THD+N, 92 dB PSRR, 85%效率, 1.5 W输出功率
D类放大器PWM深亚微米CMOS数字控制音频放大器
▸采用数字控制全局闭环混合信号架构
▸数字域实现环路增益极点和零点
▸兼容深亚微米工艺的高性能音频放大器设计
Abstract
It is traditionally challenging to implement higher- order PWM closed-loop Class-D audio amplifiers using analog in- tensive techniques in deep-submicron, low voltage process tech- nologies. This is primarily attributed to reduced power supply, de- graded analog transistor characte ristics, including short-channel effects, increased flicker noise, random telegraph noise, transistor reliability concerns and passive component performance. In this paper, we introduce a global closed -loop mixed-signal architecture incorporating digital control and integrate a fourth-order ampli- fier prototype in 55 nm CMOS. A systematic approach to analyze, design and compensate the feedback loop in the digital domain is also presented. The versatility of implementing the loop gain poles and zeros digitally attains high gain throughout the audio band and attenuates residual high frequency ripples around the loop, si- multaneously accomplishing i mprovements in THD+N and PSRR. The overall architecture is inhere ntly amenable to implementation in deep-submicron and is therefore compatible with scaled CMOS. The measured prototype achieves a high 105 dBA SNR, 0.0031% THD+N, 92 dB PSRR and 85% efficiency when supplying 1 W into emulated 8 speaker load. This performance is competitive with conventional designs using large feature size precision CMOS or specialized BCD technologies and reports the highest output power (1.5 W) for deep-submicron designs.