← 返回 JSSC 论文列表JSSC 2015第9期Digital Circuits90nmNeural Network Accelerator
An Asymmetric-V oltage-Biased Current-Mode Sensing Scheme for Fast-Read Embedded
提出一种基于不对称电压偏置的电流模式传感方案，用于快速读取嵌入式闪存。
3.9 ns读取时间（1.2 V，512行）
电流模式传感放大器嵌入式闪存高速读取不对称电压偏置输入偏移抑制
▸采用不对称电压偏置的电流模式传感放大器（AVB-CSA）
▸抑制输入偏移，无需运行时偏移消除操作
▸支持高速读取
Abstract
Current-mode sense amplifiers (CSA) are commonly used in eNVM, because of their fast read speed at large bitline (BL) loads and small cell read currents. However, conventional CSAs are unable to achieve fast random read access time ,d u et o significant summed input offsets - at read-path. This work proposes a calibration-bas ed asymmetric-voltage-biased CSA (A VB-CSA) to suppress - and enable high-speed sensing without the need for run-ti me offset-cancellation opera- tions. This work then fabricated two 90 nm A VB-CSA 1 Mb Flash testchips (with and without BL-le ngth test-modes). The A VB-CSA eFlash macros with 512 rows achieved of 3.9 ns at nominal VDD (1.2 V). The BL-length tes t-mode experiments confirmed a improvement in using A VB-CSA with a BL-length of 2048-rows operating at V.