JSSC 2015第10期Other0.13μm

170 GHz SiGe-BiCMOS Loss-Compensated Distributed Ampliﬁer Paolo V alerio Testa, Guido Belﬁore, Robert Paulo

本文介绍了一种基于0.13μm SiGe BiCMOS工艺的170 GHz宽带行波放大器，实现了10 dB增益和170 GHz带宽。

0.13μm SiGe BiCMOS, 10 dB gain, 170 GHz bandwidth, 108 mW power consumption, 0.38 mm² area

行波放大器SiGe BiCMOS宽带增益带宽积高频补偿

▸创新点1：采用增益单元补偿高频合成线损耗，通过优化增益单元设计，有效补偿了高频合成线的损耗，从而显著提升了电路的带宽和增益带宽积（GBP），实现了170 GHz的3 dB带宽。

▸创新点2：扩展带宽和增益带宽积，通过创新的电路设计和优化，实现了10 dB的增益和170 GHz的带宽，达到了硅基工艺中的最高工作频率，突破了传统设计的限制。

▸创新点3：实现硅基工艺中的最高工作频率，采用0.13 μm SiGe BiCMOS技术，成功实现了300 GHz和500 GHz的截止频率，展示了硅基工艺在高频应用中的潜力。

▸创新点4：优化芯片面积和功耗，设计仅占用0.38 mm²的芯片面积，功耗为108 mW，实现了最高的增益带宽积（GBP）与功耗和面积的比值，提升了电路的能效比。

Abstract

This paper presents a travelling-wave ampliﬁer (TW A) for wideband applications implemented in a 0.13 mS i G e BiCMOS technology ( 300 GHz, 500 GHz). The gain cell employed in the TW A is designed to compensate the synthetic-line losses at high frequencies in order to extend the bandwidth as well as the gain bandwidth product (GBP). A gain of 10 dB and a 3 dB bandwidth of 170 GHz are measured for the fabricated circuit. The circuit an alysis is presented to illustrate how the bandwidth of the circuit is dominated by the cutoff fre- quency of the synthetic lines, thus demonstrating complete losses compensation for the band of interest. The chip required a total area of 0.38 mm and a power consumption of 108 mW. Com- pared against the state of the art, the presented design achieves the highest reported GBP per power consumption and area, as well as the highest operation freque ncy for silicon implement ations.