JSSC 2015第10期Image Sensors0.35µm CMOS

A 2 kfps Sub-µWPix Uncooled-PbSe Digital Imager With 10 Bit DR Adjustment and FP

提出一种基于VPD PbSe光电导体的单片非制冷高速成像器，具有10位动态范围校准和FPN补偿功能。

80 × 80成像器，135 µm像素间距，68%填充因子，2 kfps帧率，亚µW像素功耗

中波红外热成像非制冷成像器VPD PbSe动态范围校准FPN补偿

▸单片非制冷高速成像器：采用标准CMOS工艺与VPD PbSe探测器后处理技术，实现单片集成非制冷中波红外成像器，支持2 kfps高速成像，突破传统MWIR成像依赖笨重冷却装置的限制。

▸VPD PbSe光电导体：通过气相沉积PbSe光电导体技术，显著提升探测器响应率与灵敏度，同时实现135 µm像素间距和68%填充因子，为低成本高性能MWIR成像提供新方案。

▸10位动态范围校准和FPN补偿：提出全数字可配置ROIC架构，集成暗电流消除、输出电容补偿及FPN校正技术，实现10位实时动态范围调整，有效抑制工艺非均匀性导致的固定模式噪声。

▸低功耗与高能效设计：像素功耗低于0.5 µW，系统级优化实现55 mK×ms的品质因数，兼顾高速成像与低功耗特性，适用于工业监测和车载等实时应用场景。

Abstract

Mid-wavelength infrared (MWIR) thermography is an emerging technology with promising application ss u c ha si n - dustrial monitoring, medicine and automotive, but its use in high- speed cameras is not yet widespread due to the lack of inexpensive sensor integration solut ions and their common re liance on bulky cooling mechanisms. This work ﬁl ls the gap by presenting a mono- lithic uncooled high-speed image r based on vapor-phase deposi- tion lead selenide (VPD PbSe) photoconduc tors and a ful